pd -2.472 rev. b 01/99 ? reduced rfi and emi ? reduced snubbing ? extensive characterization of recovery parameters features description hexfred tm diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. an extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ultrafast, soft recovery diode hexfred tm HFA80NC40CSL sld-61-8 v r = 400v v f (typ.) ? = 1v i f(av) = 80a q rr (typ.) = 200nc i rrm (typ.) = 6a t rr (typ.) = 30ns di (rec)m /dt (typ.) ? = 190a/s absolute maximum ratings (per leg) note: ? limited by junction temperature ? l = 100h, duty cycle limited by max t j ? 125c thermal - mechanical characteristics parameter min. typ. max. units r thjc junction-to-case, single leg conducting CCCC CCCC 0.85 junction-to-case, both legs conducting CCCC CCCC 0.42 wt weight CCCC 4.3 (0.15) CCCC g (oz) c/w k/w w parameter max. units v r cathode-to-anode voltage 400 v i f @ t c = 25c continuous forward current 85 i f @ t c = 100c continuous forward current 42 a i fsm single pulse forward current ? 300 e as non-repetitive avalanche energy ? 1.4 mj p d @ t c = 25c maximum power dissipation 150 p d @ t c = 100c maximum power dissipation 59 t j operating junction and t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) -55 to +150 c 1
HFA80NC40CSL pd-2.472 rev. b 01/99 2 parameter min. typ. max. units test conditions v br cathode anode breakdown voltage 400 CCC CCC v i r = 100a v fm max forward voltage CCC 1.1 1.3 i f = 40a CCC 1.3 1.5 v i f = 80a CCC 1.0 1.2 i f = 40a, t j = 125c i rm max reverse leakage current CCC 0.50 3.0 a v r = v r rated CCC 0.75 4.0 ma t j = 125c, v r = 320v c t junction capacitance CCC 90 125 pf v r = 200v l s series inductance CCC 5.5 CCC nh lead to lead 5mm from package body electrical characteristics (per leg) @ t j = 25c (unless otherwise specified) dynamic recovery characteristics (per leg) @ tj = 25c (unless otherwise specified) a/s nc a parameter min. typ. max. units test conditions t rr reverse recovery time CCC 30 CCC i f = 1.0a, di f /dt = 200a/s, v r = 30v t rr1 CCC 67 100 ns t j = 25c t rr2 CCC 110 170 t j = 125c i f = 40a i rrm1 peak recovery current CCC 6.0 11 t j = 25c i rrm2 CCC 9.0 16 t j = 125c v r = 200v q rr1 reverse recovery charge CCC 200 540 t j = 25c q rr2 CCC 500 1300 t j = 125c di f /dt = 200a/s di (rec)m /dt1 peak rate of fall of recovery current CCC 240 CCC t j = 25c di (rec)m /dt2 during t b CCC 190 CCC t j = 125c see fig. 1 see fig. 2 see fig. 3 see fig. 5 see fig. 6 see fig. 7 see fig. 8 outline d 61- 8-sl dimensions in millimeters and (inches) foot print
HFA80NC40CSL pd-2.472 rev. b 01/99 3 fig. 4 - maximum thermal impedance z thjc characteristics, (per leg) fig. 2 - typical reverse current vs. reverse voltage, (per leg) fig. 3 - typical junction capacitance vs. reverse voltage, (per leg) fig. 1 - maximum forward voltage drop vs. instantaneous forward current, (per leg) 0.1 1 10 100 1000 10000 0 100 200 300 400 r r reverse volta g e - v (v) t = 150c reverse current - i (a) t = 125c t = 25c j j j 10 100 1000 1 10 100 1000 t = 25c j reverse volta g e - v (v) r t junction capacitance - c (pf) a 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 fm f instantaneous forward current - i (a) forward volta g e drop - v (v) t = 150c t = 125c t = 25c j j j 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1 thjc t , rectan g ular pulse duration (seconds) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 sin g le p ulse (thermal resistance) thermal impedance - z (k/w ) 2 t 1 t p dm notes: 1. duty factor d = t / t 2. peak t = p x z + t j dm thjc c 2 1
HFA80NC40CSL pd-2.472 rev. b 01/99 4 fig. 7 - typical stored charge vs. di f /dt, (per leg) fig. 8 - typical di (rec)m /dt vs. di f /dt, (per leg) fig. 5 - typical reverse recovery vs. di f /dt, (per leg) fig. 6 - typical recovery current vs. di f /dt, (per leg) 40 60 80 100 120 140 160 100 1000 f di /dt - (a/s) t - (ns) rr i = 100a i = 40a i = 20a v = 200v t = 125c t = 25c r j j f f f 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i =100a i = 40a i = 20a v = 200v t = 125c t = 25c r j j f f f 100 1000 10000 100 1000 f di /dt - (a/s) di(rec)m/dt - (a/s) i = 100a i = 20a i = 40a v = 200v t = 125c t = 25c r j j f f f 0 500 1000 1500 2000 2500 100 1000 f di /dt - (a/s) rr q - (nc) i = 100a i = 40a i = 20a v = 200v t = 125c t = 25c r j j f f f
HFA80NC40CSL pd-2.472 rev. b 01/99 5 4. q rr - area under curve defined by t rr and i rrm t rr x i rrm q rr = 2 5. di (rec)m /dt - peak rate of change of current during t b portion of t rr v (aval) r(rated) i l(pk) v decay time fig. 11 - avalanche test circuit and waveforms fig. 10 - reverse recovery waveform and definitions fig. 9 - reverse recovery parameter test circuit t a t b t rr q rr i f i rrm i rrm 0.5 di(rec)m/dt 0.75 i rrm 5 4 3 2 0 1 di /dt f 1. di f /dt - rate of change of current through zero crossing 2. i rrm - peak reverse recovery current 3. trr - reverse recovery time measured from zero crossing point of negative going i f to point where a line passing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current reverse recovery circuit irfp250 d.u.t. l = 70h v = 200v r 0.01 w g d s dif/dt adjust current monitor high-speed sw itch dut rg = 25 ohm + free-w heel dio de vd = 50v l = 100h http://www.irf.com fax-on-demand: +44 1883 733420 data and specifications subject to change wit hout notice. 233 kansas st., el segundo, california 90245 u.s.a. tel: (310) 322 3331. fax: (310) 322 3332. hurst green, oxted, surrey rh8 9bb, u.k. tel: ++ 44 1883 732020. fax: ++ 44 1883 733408. 15 lincoln court, brampton, markham, ontario l6t3z2. tel: (905) 453 2200. fax: (905) 475 8801. saalburgstrasse 157, 61350 bad homburg. tel: ++ 49 6172 96590. fax: ++ 49 6172 965933. via liguria 49, 10071 borgaro, torino. tel: ++ 39 11 4510111. fax: ++ 39 11 4510220. k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo, japan 171. tel: 81 3 3983 0086. 1 kim seng promenade, great world city west tower,13-11, singapore 237994. tel: ++ 65 838 4630. 16 fl. suite d.207, sec. 2, tun haw south road, taipei, 10673, taiwan. tel: 886 2 2377 9936. world headquarters: world headquarters: world headquarters: world headquarters: world headquarters: european headquarters: european headquarters: european headquarters: european headquarters: european headquarters: ir canada: ir canada: ir canada: ir canada: ir canada: ir germany: ir germany: ir germany: ir germany: ir germany: ir italy: ir italy: ir italy: ir italy: ir italy: ir far east: ir far east: ir far east: ir far east: ir far east: ir southeast asia: ir southeast asia: ir southeast asia: ir southeast asia: ir southeast asia: ir taiwan: ir taiwan: ir taiwan: ir taiwan: ir taiwan:
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